Performance Analysis of Gate Misaligned Triple Material Double Gate (TMDG) MOSFET
نویسندگان
چکیده
منابع مشابه
2d Threshold and Tran Conductance to Drain Current Ratio Modeling of Triple Material Double Gate (TMDG) Mosfet
VLSI technology is constantly evolving towards smaller line widths. In this paper analytical modeling for triple material double gate (TMDG) MOSFETs has been presented in the field of VLSI technology. An entire circuit is manufactured in a single piece of silicon. The level of integration of silicon technology as measured in terms of number of devices per IC. This leads to the concept of scalin...
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ژورنال
عنوان ژورنال: International Journal of Information Sciences and Techniques
سال: 2014
ISSN: 2319-409X,2249-1139
DOI: 10.5121/ijist.2014.4317